HAT2266HWS-E
MOSFET N-CH 60V 30A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2266HWS-E, an N-Channel Power MOSFET, offers a 60V drain-source voltage rating and a continuous drain current capability of 30A at 25°C ambient. This device features a low on-resistance of 12mOhm at 15A, 10V, facilitated by a 4.5V to 10V drive voltage range. The maximum gate charge is specified at 25 nC at 4.5V, with input capacitance (Ciss) not exceeding 3600 pF at 10V. Designed for surface mounting, the HAT2266HWS-E utilizes the LFPAK package (SC-100, SOT-669) and supports a maximum power dissipation of 23W at the case. It operates within a temperature range of -55°C to 150°C. This component is commonly employed in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 10 V |
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