HAT2261H-EL-E
MOSFET N-CH 30V 45A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation presents the HAT2261H-EL-E, an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 45A at 25°C ambient. With a low on-resistance of 3.8mOhm maximum at 22.5A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 27 nC maximum at 4.5V, enabling efficient switching. Its robust construction includes a maximum power dissipation of 25W (Tc) and an operating junction temperature of 150°C. Supplied in a 5-LFPAK package (SC-100, SOT-669), the HAT2261H-EL-E is suitable for surface mounting and is available on tape and reel. This MOSFET finds application in power management circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 5-LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 10 V |
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