HAT2256RWS-E
MOSFET N-CH 60V 8A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2256RWS-E is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C (Ta). With a low on-resistance (Rds On) of 30mOhm maximum at 4A and 10V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 10nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 1210pF maximum at 10V Vds. It is housed in an 8-SOP package suitable for surface mounting and operates up to a maximum temperature of 150°C. The permissible gate-source voltage (Vgs) ranges from -20V to +20V. This MOSFET is commonly utilized in power supply units, motor control, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1210 pF @ 10 V |
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