HAT2199R-EL-E
MOSFET N-CH 30V 11A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2199R-EL-E is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 11A at 25°C. The low on-resistance (Rds On) of 16.5mOhm at 5.5A and 10V Vgs ensures minimal power loss during conduction. With a gate charge (Qg) of 7.5 nC at 4.5V and an input capacitance (Ciss) of 1060 pF at 10V, it is suitable for various power management circuits. The device has a maximum power dissipation of 2W (Ta) and an operating junction temperature of 150°C. Packaged in an 8-SOP (8-SOIC) surface mount configuration, the HAT2199R-EL-E is utilized in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 10 V |
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