HAT2197R-EL-E
MOSFET N-CH 30V 16A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2197R-EL-E is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 16 A at 25°C. The device exhibits a low on-resistance (Rds On) of 6.7 mOhm at 8 A and 10 V, optimized for efficient power handling. With a maximum power dissipation of 2.5 W (Ta), it is suitable for surface mount applications within an operating temperature range of 150°C (TJ). The 8-SOP package provides a compact footprint. Key electrical characteristics include a gate charge (Qg) of 18 nC at 4.5 V and input capacitance (Ciss) of 2650 pF at 10 V. This MOSFET is utilized across various industries including automotive, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 10 V |
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