HAT2185WPWS-E
MOSFET N-CH 150V 10A 8WPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation HAT2185WPWS-E is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 10A at 25°C (Ta), with a power dissipation capability of 20W (Tc). The on-resistance (Rds On) is specified at a maximum of 190mOhm at 5A and 10V. Key parameters include a gate charge (Qg) of 9.7 nC at 10V and input capacitance (Ciss) of 430 pF at 25V.
This component utilizes surface mount technology, housed in an 8-WPAK (3) package, also known as 8-PowerWDFN. It operates within a temperature range of 150°C and supports a gate-source voltage (Vgs) range of ±30V. The threshold voltage (Vgs(th)) is a maximum of 4.5V at 1mA. The HAT2185WPWS-E is suitable for use in power supply units, motor control, and industrial automation systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | 8-WPAK (3) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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