HAT2173HWS-E
MOSFET N-CH 100V 25A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2173HWS-E is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 25 A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 15 mOhm at 12.5 A and 10 V gate-source voltage. With a maximum power dissipation of 30 W (Tc), it is suitable for thermal management in compact designs. The device is supplied in a 5-lead LFPAK package, facilitating efficient heat sinking and high-density board layouts. Gate charge (Qg) is 61 nC at 10 V, and input capacitance (Ciss) is 4350 pF at 10 V. Operating temperature range extends to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 10 V |
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