HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's HAT2172N-EL-E is an N-Channel MOSFET designed for demanding power applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C ambient temperature, with a maximum power dissipation of 20W at 100°C case temperature. The low on-resistance of 7.8mOhm at 15A and 10V gate-source voltage minimizes conduction losses. The device is housed in an 8-LFPAK-iV package, facilitating efficient thermal management in surface mount designs. Key parameters include a gate charge of 32 nC and input capacitance of 2420 pF. This MOSFET is suitable for use in automotive, industrial power supplies, and battery management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-LFPAK-iV |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 10 V |
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