HAT2171H-EL-E
MOSFET N-CH 40V 40A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's HAT2171H-EL-E is an N-Channel MOSFET designed for robust power switching applications. This component features a 40V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C ambient temperature, dissipating up to 25W at 25°C case temperature. The low on-resistance is specified at 4.8mOhm maximum at 20A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 52 nC at 10V and an input capacitance (Ciss) of 3750 pF at 10V. The device is housed in a compact LFPAK package, suitable for surface mounting, and operates within a junction temperature range of 150°C. This MOSFET is frequently utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 10 V |
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