HAT2170HWS-E
MOSFET N-CH 40V 45A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2170HWS-E is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C. The device exhibits a low on-resistance (Rds On) of 4.2mOhm at 22.5A and 10V gate drive, with a maximum power dissipation of 30W (Tc). Key electrical characteristics include a gate charge (Qg) of 62 nC at 10V and an input capacitance (Ciss) of 4650 pF at 10V. The operating temperature range extends to 150°C. Mounting is via surface mount in the LFPAK package (SC-100, SOT-669). This MOSFET is utilized in industries such as automotive and industrial power control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 10 V |
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