HAT2168HWS-E
MOSFET N-CH 30V 30A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2168HWS-E is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C ambient temperature. Its low on-resistance, specified at a maximum of 7.9mOhm at 15A and 10V Vgs, ensures minimal conduction losses. The device is housed in a compact LFPAK (SC-100, SOT-669) surface mount package, offering excellent thermal performance with a maximum power dissipation of 15W at 25°C case temperature. Key electrical characteristics include a gate-source voltage range of ±20V, a threshold voltage (Vgs(th)) of 2.5V maximum at 1mA, and a gate charge (Qg) of 11nC maximum at 4.5V Vgs. Input capacitance (Ciss) is rated at 1730pF maximum. This MOSFET is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V |
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