HAT2168H-EL-E
MOSFET N-CH 30V 30A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation HAT2168H-EL-E is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C ambient temperature, with a maximum power dissipation of 15W at 100°C case temperature. The low on-resistance of 7.9mOhm at 15A and 10V Vgs makes it suitable for power conversion and management circuits. It utilizes advanced MOSFET technology for optimal performance and is housed in a compact LFPAK (SC-100, SOT-669) package for surface mounting. Key parameters include a maximum gate charge of 11nC at 4.5V Vgs and an input capacitance of 1730pF at 10V Vds. This device is commonly found in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK2017DPP-M0#T2
ABU / MOSFET
HAF1002-92L
P-CHANNEL POWER MOSFET
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
