HAT2166HWS-E
MOSFET N-CH 30V 45A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2166HWS-E is an N-Channel MOSFET designed for high-current switching applications. This component features a 30V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 45A at 25°C ambient temperature. The device exhibits a low on-resistance (Rds On) of 3.8mOhm maximum at 22.5A and 10V Vgs. With a gate charge (Qg) of 27 nC maximum at 4.5V and input capacitance (Ciss) of 4400 pF maximum at 10V Vds, it is optimized for efficient switching. The HAT2166HWS-E is housed in a compact LFPAK (SC-100, SOT-669) surface mount package, enabling high power density with a maximum power dissipation of 25W at 25°C case temperature. It operates across a temperature range of -55°C to 150°C and supports gate-source voltages up to ±20V. This MOSFET is suitable for use in power supply units, automotive applications, and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 10 V |
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