HAT2165N-EL-E
MOSFET N-CH 30V 55A 8LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2165N-EL-E is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 55A at 25°C (Ta), with a maximum power dissipation of 30W (Tc). The low on-resistance of 3.6mOhm at 27.5A and 10V gate-source voltage (Vgs) ensures efficient power transfer. The device is housed in an 8-LFPAK-iV package for surface mounting, facilitating compact board designs. Key electrical parameters include a gate charge (Qg) of 33 nC at 4.5V Vgs and input capacitance (Ciss) of 5180 pF at 10V Vds. Operating temperature range extends up to 150°C (TJ). This Power MOSFET finds application in power management systems, industrial automation, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 8-LFPAK-iV |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5180 pF @ 10 V |
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