HAT2165HWS-E
MOSFET N-CH 30V 55A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's HAT2165HWS-E is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a 30V drain-source voltage and a continuous drain current capability of 55A (Ta) at 25°C, this component delivers robust power handling. The low on-resistance of 3.3mOhm (Max) at 27.5A and 10V gate drive is achieved through advanced MOSFET technology. The device offers a maximum gate charge of 33 nC at 4.5V, contributing to efficient switching. With a maximum power dissipation of 30W (Tc) and an operating temperature range up to 150°C, the HAT2165HWS-E is suitable for use in automotive and industrial power management systems. It is supplied in a compact LFPAK package (SC-100, SOT-669) for surface mounting, available on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5180 pF @ 10 V |
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