HAT2165H-EL-E
MOSFET N-CH 30V 55A LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2165H-EL-E is an N-Channel MOSFET designed for high-current switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 55A at 25°C (Ta), with a maximum power dissipation of 30W (Tc). The device exhibits a low on-resistance (Rds On) of 3.3mOhm at 27.5A and 10V gate-source voltage, optimized for efficient power delivery. Key electrical parameters include a gate charge (Qg) of 33 nC at 4.5V and an input capacitance (Ciss) of 5180 pF at 10V. The drive voltage range is specified from 4.5V to 10V, with a maximum gate-source voltage tolerance of ±20V and a threshold voltage (Vgs(th)) of 2.5V at 1mA. Packaged in an LFPAK (SC-100, SOT-669) for surface mounting, this MOSFET operates at junction temperatures up to 150°C and is supplied on tape and reel. Its specifications make it suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5180 pF @ 10 V |
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