HAT2033RWS-E
MOSFET N-CH 60V 7A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT2033RWS-E is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 7A at 25°C. The on-resistance (Rds On) is specified at a maximum of 38mOhm at 4A with a 10V gate-source voltage (Vgs).
The device is housed in an 8-SOP package, suitable for surface mounting. It offers a maximum power dissipation of 2.5W (Ta) and operates at temperatures up to 150°C. Key electrical parameters include input capacitance (Ciss) of 740pF at 10V and a gate-source threshold voltage (Vgs(th)) of 2.2V at 1mA. This MOSFET is utilized in various industrial applications requiring reliable power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 10 V |
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