HAT1127HWS-E
MOSFET P-CH 30V 40A 5LFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT1127HWS-E is a P-Channel MOSFET designed for demanding power switching applications. This component features a 30V drain-source voltage (Vdss) and can handle a continuous drain current (Id) of 40A at 25°C ambient. The LFPAK package offers a high power dissipation capability of 30W (Tc) and a low on-resistance of 4.5mOhm at 20A and 10V gate-source voltage (Vgs). Key electrical characteristics include a maximum gate charge (Qg) of 125 nC at 10V and maximum input capacitance (Ciss) of 5600 pF at 10V. This surface mount device operates across a temperature range of -55°C to 150°C. The HAT1127HWS-E is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +10V, -20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 10 V |
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