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HAT1069C-EL-E

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HAT1069C-EL-E

MOSFET P-CH 12V 4A 6CMFPAK

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation HAT1069C-EL-E is a P-Channel MOSFET with a drain-source voltage (Vdss) of 12V. This surface mount component, housed in a 6-CMFPAK package, offers a continuous drain current (Id) of 4A at 25°C and a maximum power dissipation of 900mW. The Rds On is specified at 52mOhm maximum for an Id of 1.5A and Vgs of 4.5V. Key characteristics include a gate charge (Qg) of 16 nC at 4.5V and input capacitance (Ciss) of 1380 pF at 10V. Operating temperature reaches up to 150°C. This device is suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs52mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 1mA
Supplier Device Package6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V

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