HAT1069C-EL-E
MOSFET P-CH 12V 4A 6CMFPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT1069C-EL-E is a P-Channel MOSFET with a drain-source voltage (Vdss) of 12V. This surface mount component, housed in a 6-CMFPAK package, offers a continuous drain current (Id) of 4A at 25°C and a maximum power dissipation of 900mW. The Rds On is specified at 52mOhm maximum for an Id of 1.5A and Vgs of 4.5V. Key characteristics include a gate charge (Qg) of 16 nC at 4.5V and input capacitance (Ciss) of 1380 pF at 10V. Operating temperature reaches up to 150°C. This device is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 1.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | 6-CMFPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 10 V |
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