HAT1047RWS-E
MOSFET P-CH 30V 14A 8SOPManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation HAT1047RWS-E is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This device offers a continuous drain current (Id) of 14A at 25°C and a maximum power dissipation of 2.5W (Ta). It features a low on-resistance (Rds On) of 12mOhm at 7A and 10V gate-source voltage. The HAT1047RWS-E is supplied in an 8-SOP package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 3500 pF at 10V. This component is utilized in various applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 10 V |
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