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HAT1047RWS-E

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HAT1047RWS-E

MOSFET P-CH 30V 14A 8SOP

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation HAT1047RWS-E is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This device offers a continuous drain current (Id) of 14A at 25°C and a maximum power dissipation of 2.5W (Ta). It features a low on-resistance (Rds On) of 12mOhm at 7A and 10V gate-source voltage. The HAT1047RWS-E is supplied in an 8-SOP package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 3500 pF at 10V. This component is utilized in various applications within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Rds On (Max) @ Id, Vgs12mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 10 V

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