H5N3011P80-E#T2
N-CHANNEL POWER MOSFETManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation H5N3011P80-E-T2 is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component offers a robust solution for designers demanding high performance and reliability in power management systems. Its advanced trench technology facilitates low on-resistance (RDS(on)) and reduced switching losses, critical for optimizing power supply efficiency in demanding environments. The H5N3011P80-E-T2 is suitable for use in automotive, industrial, and consumer electronics sectors where efficient power delivery and thermal management are paramount. Packaged in bulk for high-volume manufacturing, this MOSFET is engineered to meet rigorous performance standards.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
