H5N3007FL-M0-E#T2
MOSFET N-CH 300V 15A TO220FLManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation H5N3007FL-M0-E-T2 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 300 V drain-source voltage (Vdss) and a continuous drain current of 15 A (Ta) at 25°C. The device offers a low on-resistance of 160 mOhm maximum at 7.5 A and 10 V gate-source voltage. With a maximum power dissipation of 35W (Tc), it is suitable for demanding power conversion and control circuits. Key electrical parameters include a gate charge (Qg) of 80 nC at 10 V and input capacitance (Ciss) of 2180 pF at 25 V. The H5N3007FL-M0-E-T2 utilizes Metal Oxide technology and is packaged in a TO-220FL (TO-220-3 Full Pack) through-hole configuration. The operating temperature range extends to 150°C, making it applicable in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FL |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 25 V |
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