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H5N2521FN-E#T2

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H5N2521FN-E#T2

POWER FIELD-EFFECT TRANSISTOR

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 250 V 3A (Ta) 20W (Ta) Through Hole TO-220FN

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs2.2Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)20W (Ta)
Vgs(th) (Max) @ Id4.5V @ 1mA
Supplier Device PackageTO-220FN
Grade-
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
Qualification-

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