2SK4151TZ-E
MOSFET N-CH 150V 1A TO92Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation 2SK4151TZ-E is an N-Channel Power MOSFET designed for various electronic applications. This component features a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 1A at 25°C. The Rds On is specified at a maximum of 1.95 Ohms at 500mA and 4V gate drive. With a maximum power dissipation of 750mW (Ta), this MOSFET is suitable for use in power management circuits. It is packaged in a standard TO-92 (TO-226-3, TO-92-3) through-hole package, supplied on tape and reel. The 2SK4151TZ-E finds application in industries such as consumer electronics and industrial automation where efficient switching and voltage regulation are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 500mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-92 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 98 pF @ 10 V |
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