2SK4093TZ-E
MOSFET N-CH 250V 1A TO92MODManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation 2SK4093TZ-E is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 1A at 25°C. With a maximum power dissipation of 900mW at 25°C and an Rds On of 2.6 Ohm at 500mA and 4V, it offers efficient switching characteristics. Key parameters include a gate charge (Qg) of 5.5 nC at 4V and input capacitance (Ciss) of 140 pF at 25V. The device operates at junction temperatures up to 150°C and is supplied in a TO-92MOD package, delivered on Tape & Reel. This MOSFET is utilized in various industrial sectors requiring robust power control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 500mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-92MOD |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
RJK1001DPN-E0#T2
MOSFET N-CH 100V 80A TO220AB
