2SK4080-ZK-E1-AY
MOSFET N-CH 30V 48A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's 2SK4080-ZK-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 48A at 25°C (Tc). With a low on-resistance of 9mOhm at 24A and 10V Vgs, it minimizes conduction losses. The device offers a maximum junction temperature of 150°C and a power dissipation of 29W at 25°C (Tc), ensuring robust operation. Key parameters include a gate charge of 32 nC at 12V and input capacitance of 1670 pF at 10V. The 2SK4080-ZK-E1-AY is housed in a TO-252 (MP-3Z) surface-mount package, commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 29W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-252 (MP-3Z) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 10 V |
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