2SK3984-ZK-E1-AY
MOSFET N-CH 100V 18A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's 2SK3984-ZK-E1-AY is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 18 A at 25°C (Tc). With a low on-resistance of 85 mOhm at 9 A and 10 V, it minimizes conduction losses. The device offers a maximum power dissipation of 1 W (Ta) and 20 W (Tc), along with a high operating junction temperature of 150°C. Key electrical specifications include a gate charge (Qg) of 13 nC (Max) and input capacitance (Ciss) of 750 pF (Max) at 10 V. It is housed in a TO-252-3, DPAK surface mount package, suitable for automated assembly. This MOSFET is utilized in power supply switching, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-252 (MP-3ZK) |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 10 V |
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