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2SK3814-Z-E1-AZ

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2SK3814-Z-E1-AZ

MP-3 AL

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation N-Channel Power MOSFET, part number 2SK3814-Z-E1-AZ, offers a 60V drain-to-source voltage and 60A continuous drain current at 25°C ambient temperature. This TO-252 (MP-3Z) surface mount device features a low on-resistance of 8.7mOhm maximum at 30A and 10V Vgs, with a gate charge of 95nC maximum at 10V. The input capacitance (Ciss) is 5450pF maximum at 10V. With a maximum power dissipation of 84W (Ta) and an operating temperature up to 150°C, this MOSFET is suitable for applications in automotive, industrial power, and power supply sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: StripDatasheet:
Technical Details:
PackagingStrip
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Rds On (Max) @ Id, Vgs8.7mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)84W (Ta)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageTO-252 (MP-3Z)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5450 pF @ 10 V

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