2SK3814-AZ
MOSFET N-CH 60V 60A TO251Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation 2SK3814-AZ is an N-Channel Power MOSFET designed for high-performance switching applications. This TO-251 packaged device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 60A at 25°C (Tc). The low on-resistance (Rds On) of 8.7mOhm at 30A and 10V (Vgs) ensures efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 95 nC (Max) at 10V and input capacitance (Ciss) of 5450 pF (Max) at 10V. With a maximum junction temperature of 150°C and power dissipation capabilities of 1W (Ta) and 84W (Tc), this component is suitable for demanding applications in power supplies, motor control, and automotive systems. The TO-251-3 Short Leads, IPAK, TO-251AA package facilitates through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 84W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-251 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450 pF @ 10 V |
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