2SK3793-AZ
MOSFET N-CH 100V 12A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation 2SK3793-AZ is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source breakdown voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 125mOhm maximum at 6A and 10V gate-source voltage. With a gate charge (Qg) of 21 nC maximum at 10V and input capacitance (Ciss) of 900 pF maximum at 10V, it is optimized for efficient switching.
The 2SK3793-AZ is housed in a TO-220-3 Isolated Tab package, suitable for through-hole mounting. It offers a maximum power dissipation of 2W (Ta) and 20W (Tc), with an operating junction temperature of 150°C. This MOSFET is commonly employed in power supply units, motor control, and general-purpose switching applications across various industries including industrial automation and consumer electronics. The maximum gate-source voltage (Vgs) is ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
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