2SK3712-Z-E1-AZ
MOSFET N-CH 250V 9A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation 2SK3712-Z-E1-AZ is an N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 9A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 580mOhm at 4.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 14 nC (Max) and input capacitance (Ciss) of 450 pF (Max) at 10V. The 2SK3712-Z-E1-AZ is housed in a TO-252 (MP-3Z) surface mount package. This MOSFET is utilized in various industrial and consumer electronics sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 580mOhm @ 4.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-252 (MP-3Z) |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 10 V |
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