2SK3659-AZ
MOSFET N-CH 20V 65A TO220-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's 2SK3659-AZ is an N-Channel Power MOSFET designed for high-current applications. This component features a 20 V drain-source voltage (Vdss) and a continuous drain current (Id) of 65 A at 25°C (Tc). With a low on-resistance (Rds(on)) of 5.7 mOhm at 40 A and 10 V, it minimizes conduction losses. The maximum gate charge (Qg) is 32 nC at 10 V, and the input capacitance (Ciss) is 1700 pF at 10 V. Packaged in a TO-220-3 isolated tab, this through-hole device is suitable for demanding power management solutions across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Isolated Tab |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 40A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220-3 |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK2017DPP-M0#T2
ABU / MOSFET
HAF1002-92L
P-CHANNEL POWER MOSFET
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
