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2SK3635-Z-E1-AZ

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2SK3635-Z-E1-AZ

MOSFET N-CH 200V 8A TO252

Manufacturer: Renesas Electronics Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Renesas Electronics Corporation's 2SK3635-Z-E1-AZ is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 8 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 430 mOhm at 4 A and 10 V. Key characteristics include a gate charge (Qg) of 12 nC (max) at 10 V and an input capacitance (Ciss) of 390 pF (max) at 10 V. The threshold voltage (Vgs(th)) is 4.5 V (max) at 1 mA. This MOSFET is housed in a TO-252 (MP-3Z) surface-mount package and is supplied in bulk. Its robust specifications make it suitable for use in power supplies, automotive systems, and industrial equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs430mOhm @ 4A, 10V
FET Feature-
Vgs(th) (Max) @ Id4.5V @ 1mA
Supplier Device PackageTO-252 (MP-3Z)
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds390 pF @ 10 V

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