2SK3635-Z-E1-AZ
MOSFET N-CH 200V 8A TO252Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's 2SK3635-Z-E1-AZ is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 8 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 430 mOhm at 4 A and 10 V. Key characteristics include a gate charge (Qg) of 12 nC (max) at 10 V and an input capacitance (Ciss) of 390 pF (max) at 10 V. The threshold voltage (Vgs(th)) is 4.5 V (max) at 1 mA. This MOSFET is housed in a TO-252 (MP-3Z) surface-mount package and is supplied in bulk. Its robust specifications make it suitable for use in power supplies, automotive systems, and industrial equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-252 (MP-3Z) |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
RJK1001DPN-E0#T2
MOSFET N-CH 100V 80A TO220AB
