2SK3634-AZ
MOSFET N-CH 200V 6A TO251Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation presents the 2SK3634-AZ, a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 6 A at 25°C (Tc). The On-Resistance (Rds On) is specified at a maximum of 600 mOhm at 3 A and 10 V. Key electrical parameters include a Gate Charge (Qg) of 9 nC (Max) at 10 V and an Input Capacitance (Ciss) of 270 pF (Max) at 10 V. The threshold voltage (Vgs(th)) is a maximum of 4.5 V at 1 mA. This device is housed in a TO-251 package, suitable for through-hole mounting. The 2SK3634-AZ is utilized in various industrial and power management sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-251 |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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