2SK3576-T1B-AT
MOSFET N-CH 20V SC-96 SOT-23Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's 2SK3576-T1B-AT is an N-channel MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 4 A at 25°C. The device exhibits a low on-resistance (Rds On) of 50 mOhm at 2 A and 4.5 V, contributing to reduced power loss. Key parameters include a gate charge (Qg) of 3.3 nC at 4 V and an input capacitance (Ciss) of 250 pF at 10 V. The 2SK3576-T1B-AT is housed in a compact SC-96-3, Thin Mini Mold package, suitable for surface mounting and supplied on a tape and reel. This MOSFET finds application in power management circuits across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-96-3, Thin Mini Mold |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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