2SK3484-AZ
MOSFET N-CH 100V 16A TO251Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation's 2SK3484-AZ is an N-Channel Power MOSFET designed for robust performance. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 16A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 125 milliohms at 8A and 10V gate-source voltage. With a maximum junction temperature of 150°C, it offers power dissipation of 1W (Ta) and 30W (Tc). The TO-251-3 Short Leads, IPAK, TO-251AA package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 900 pF at 10V. This device is suitable for applications in power supply units and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
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