2SK3482-AZ
MOSFET N-CH 100V 36A TO251Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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The Renesas Electronics Corporation 2SK3482-AZ is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 36 A at 25°C (Ta). With a low On-Resistance (Rds On) of 33 mOhm at 18 A and 10 V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum Gate-to-Source Voltage (Vgs) of ±20 V. Key parameters include a maximum Gate Charge (Qg) of 72 nC at 10 V and an input capacitance (Ciss) of 3600 pF at 10 V. The 2SK3482-AZ offers substantial power handling capabilities, with a maximum power dissipation of 1W (Ta) and 50W (Tc). It is housed in a TO-251 (IPAK) package suitable for through-hole mounting. This device finds application in power supply units, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 10 V |