2SK3479-Z-E1-AZ
MOSFET N-CH 100V 83A TO-263Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation 2SK3479-Z-E1-AZ is a high-performance N-Channel MOSFET designed for demanding power applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 83A at 25°C (Tc). With a low On-Resistance (Rds On) of 11mOhm at 42A and 10V, it minimizes conduction losses. The MOSFET offers significant power handling capabilities, with a maximum dissipation of 125W (Tc) and 1.5W (Ta). Key parameters include a Gate Charge (Qg) of 210 nC (Max) at 10V and an input capacitance (Ciss) of 11000 pF (Max) at 10V. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration, this component is suitable for high-density power solutions. The 2SK3479-Z-E1-AZ finds application in power supplies, motor control, and automotive systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263, TO-220SMD |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 10 V |
Request a Quote
Clients Also Buy
RJK0389DPA-WS#J53
POWER TRANSISTOR, MOSFET
HAT2173HWS-E
MOSFET N-CH 100V 25A 5LFPAK
NP40N10YDF-E1-AY
MOSFET N-CH 100V 40A 8HSON
