2SK3431-Z-E1-AZ
MOSFET N-CH 40V 83A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation 2SK3431-Z-E1-AZ is an N-Channel Power MOSFET. This component features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 83 A at 25°C (Tc). The on-resistance (Rds On) is specified as a maximum of 5.6 mOhm at 42 A and 10 V gate-source voltage. Key parameters include input capacitance (Ciss) of 6100 pF (max) at 10 V and gate charge (Qg) of 110 nC (max) at 10 V. The device supports a gate-source voltage range of ±20 V (max). Power dissipation ratings are 1.5 W (Ta) and 100 W (Tc). This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It is commonly utilized in power supply, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 10 V |
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