2SK3430-Z-E1-AZ
MOSFET N-CH 40V 80A TO220ABManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation's 2SK3430-Z-E1-AZ is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 7.3mOhm at 40A and 10V gate-source voltage. With a gate charge (Qg) of 50 nC (Max) at 10V and input capacitance (Ciss) of 2800 pF (Max) at 10V, it offers efficient switching characteristics. The MOSFET is housed in a TO-220AB package, suitable for through-hole mounting, and operates up to 150°C (TJ). Power dissipation is rated at 1.5W (Ta) and 84W (Tc). This component is commonly utilized in power supply units, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 84W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
