2SK3408-T1B-AT
MOSFET N-CH 43V 1A SC96-3Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation N-Channel MOSFET, part number 2SK3408-T1B-AT, offers a 43V drain-source breakdown voltage and a continuous drain current capability of 1A at 25°C. This device features a low on-resistance of 195mOhm maximum at 500mA and 10V Vgs, with a gate threshold voltage of 2.5V maximum at 1mA. The input capacitance (Ciss) is 230pF maximum at 10V Vds, and gate charge (Qg) is 4nC maximum at 10V Vgs. Packaged in an SC-96-3, Thin Mini Mold configuration, this surface-mount component is supplied on tape and reel. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 200mW. This MOSFET is suitable for applications in consumer electronics and industrial control systems, leveraging its Metal Oxide technology.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SC-96-3, Thin Mini Mold |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 43 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
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