2SK2315TYTR-E
MOSFET N-CH 60V 2A UPAKManufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Renesas Electronics Corporation 2SK2315TYTR-E is a N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source voltage (Vdss) of 60V and a continuous drain current (Id) of 2A at 25°C. With a maximum power dissipation of 1W (Ta) and an on-resistance (Rds On) of 450mOhm at 1A and 4V, it offers efficient switching characteristics. The UPAK package (TO-243AA) facilitates compact designs, and the device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for various industrial applications, including power management and switching circuits. The input capacitance (Ciss) is a maximum of 173pF at 10V, and the gate-source voltage (Vgs) maximum is ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | UPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 4V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 173 pF @ 10 V |
Request a Quote
Clients Also Buy
HAT2172N-EL-E
MOSFET N-CH 40V 30A 8LFPAK
2SK3115-AZ
N-CHANNEL POWER MOSFET
2SK2935-92-E
N-CHANNEL POWER MOSFET
