2SJ649-AZ
MOSFET P-CH 60V 20A TO220Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation 2SJ649-AZ is a P-Channel MOSFET designed for various power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C. The Rds On is specified at a maximum of 48mOhm when driven at 10A and 10V. The device offers a high junction temperature capability of 150°C and a maximum power dissipation of 25W at 25°C case temperature. Key parameters include an input capacitance (Ciss) of 1900pF and a gate charge (Qg) of 38 nC at 10V. It is housed in a TO-220 Isolated Tab package, suitable for through-hole mounting. The 2SJ649-AZ is utilized in industrial automation, power supplies, and automotive control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Isolated Tab |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220 Isolated Tab |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 10 V |