2SJ624-T1B-AT
MOSFET P-CH 20V SC-96 SOT-23Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Renesas Electronics Corporation P-Channel Power MOSFET, part number 2SJ624-T1B-AT, offers a 20V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 4.5A at 25°C ambient temperature. This device features a low on-resistance of 54mOhm maximum at 2.5A drain current and 4.5V gate-source voltage. The gate charge (Qg) is rated at 8.1 nC maximum at 4V, with input capacitance (Ciss) up to 813 pF at 10V. The threshold voltage (Vgs(th)) is 1.5V maximum at 1mA. The component is housed in a surface mount SC-96 package, specifically a Thin Mini Mold with 3 leads, supplied on tape and reel. This general-purpose MOSFET is frequently utilized in power management circuits across various industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 2.5A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-96-3, Thin Mini Mold |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 813 pF @ 10 V |
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