2SJ621-T1B-AT
MOSFET P-CH 12V SC-96 SOT-23Manufacturer: Renesas Electronics Corporation
Categories: Single FETs, MOSFETs
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Renesas Electronics Corporation P-Channel MOSFET, part number 2SJ621-T1B-AT. This device features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 3.5A at 25°C (Ta). The Rds On is specified at a maximum of 44mOhm when Id is 2A and Vgs is 4.5V. Gate Charge (Qg) is a maximum of 6.2 nC at 4V, and input capacitance (Ciss) is 630 pF at 10V. The threshold voltage (Vgs(th)) is a maximum of 1.5V at 1mA. This component is housed in an SC-96-3 Thin Mini Mold package and supplied on a Tape & Reel. It is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 2A, 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | SC-96-3, Thin Mini Mold |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
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