HSD226KRF-E
DIODE SCHOTTKY 25V 50MA 2SFPManufacturer: Renesas Electronics Corporation
Categories: Single Diodes
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Renesas Electronics Corporation HSD226KRF-E is a Schottky diode designed for high-frequency applications. It features a maximum reverse voltage (Vr) of 25V and an average rectified forward current (Io) of 50mA. The diode exhibits a low forward voltage drop of 380mV at 5mA and a reverse leakage current of 450nA at 20V. With a junction operating temperature up to 125°C and a capacitance of 2.8pF at 1V and 1MHz, this component is suitable for signal processing and switching applications. The HSD226KRF-E is packaged in a 2-SFP (2-SMD, Flat Leads) surface mount configuration, ideal for compact circuit designs in telecommunications and consumer electronics.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 2-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | 2.8pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50mA |
| Supplier Device Package | 2-SFP |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 25 V |
| Voltage - Forward (Vf) (Max) @ If | 380 mV @ 5 mA |
| Current - Reverse Leakage @ Vr | 450 nA @ 20 V |
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