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2SC3624-T1B-A

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2SC3624-T1B-A

TRANS NPN 50V 0.15A SC59

Manufacturer: Renesas Electronics Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Renesas Electronics Corporation NPN Bipolar Junction Transistor, part number 2SC3624-T1B-A. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. It offers a high DC current gain of 1000 minimum at 1mA collector current and 5V Vce. The transition frequency is rated at 250MHz, with a maximum power dissipation of 200mW. This NPN transistor is supplied in an SC-59 (TO-236-3, SOT-23-3) surface mount package, delivered on tape and reel. It is suitable for applications in general-purpose amplification and switching. Key parameters include a collector cutoff current of 100nA (ICBO) and a Vce saturation voltage of 300mV maximum at 5mA base current and 50mA collector current. The operating junction temperature is up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1mA, 5V
Frequency - Transition250MHz
Supplier Device PackageSC-59
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW

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