2SC3624-T1B-A
TRANS NPN 50V 0.15A SC59Manufacturer: Renesas Electronics Corporation
Categories: Single Bipolar Transistors
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Renesas Electronics Corporation NPN Bipolar Junction Transistor, part number 2SC3624-T1B-A. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. It offers a high DC current gain of 1000 minimum at 1mA collector current and 5V Vce. The transition frequency is rated at 250MHz, with a maximum power dissipation of 200mW. This NPN transistor is supplied in an SC-59 (TO-236-3, SOT-23-3) surface mount package, delivered on tape and reel. It is suitable for applications in general-purpose amplification and switching. Key parameters include a collector cutoff current of 100nA (ICBO) and a Vce saturation voltage of 300mV maximum at 5mA base current and 50mA collector current. The operating junction temperature is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1mA, 5V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SC-59 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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