2SC2853E-E
SMALL SIGNAL BIPOLAR TRANSTR NPNManufacturer: Renesas Electronics Corporation
Categories: Single Bipolar Transistors
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Renesas Electronics Corporation 2SC2853E-E is an NPN bipolar junction transistor (BJT) designed for small signal amplification. This through-hole component, packaged in a TO-92 (TO-226AA) case, offers a collector-emitter breakdown voltage of 90V and a continuous collector current capability of 100mA. It features a transition frequency of 310MHz and a maximum power dissipation of 400mW. The device exhibits a minimum DC current gain (hFE) of 400 at 2mA collector current and 12V Vce. Saturation voltage (Vce(sat)) is specified at 100mV maximum for 1mA base current and 10mA collector current. This transistor finds application in various general-purpose amplification circuits across consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 2mA, 12V |
| Frequency - Transition | 310MHz |
| Supplier Device Package | TO-92 |
| Grade | - |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 400 mW |
| Qualification | - |
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