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2SB860-E

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2SB860-E

POWER BIPOLAR TRANSISTOR, PNP

Manufacturer: Renesas Electronics Corporation

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor PNP 100 V 4 A 1.8 W Through Hole TO-220AB

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-40°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 4V
Frequency - Transition-
Supplier Device PackageTO-220AB
Grade-
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.8 W
Qualification-

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