2SB1475-T1-A
TRANS PNP SMDManufacturer: Renesas Electronics Corporation
Categories: Single Bipolar Transistors
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Renesas Electronics Corporation PNP Bipolar Junction Transistor, part number 2SB1475-T1-A. This surface-mount device, packaged in an SC-70 (SOT-323) case, offers a collector current capability of 500 mA and a collector-emitter breakdown voltage of 16 V. It features a transition frequency of 50 MHz and a maximum power dissipation of 150 mW at an operating junction temperature of 150°C. Key specifications include a minimum DC current gain (hFE) of 110 at 100 mA and 1 V, and a Vce saturation of 400 mV at 20 mA and 500 mA. The collector cutoff current (ICBO) is a maximum of 100 nA. This component is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 100mA, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SC-70 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 16 V |
| Power - Max | 150 mW |
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